FDMA1027P

FDMA1027P Dual P-Channel PowerTrench® MOSFET October 2005 FDMA1027P Dual P-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 G1 D2 D2 S1 Features –3.0 A, –20V. RDS(ON) = 120 mΩ @ VGS = –4.5V RDS(ON) = 160 mΩ @ VGS = –2.5V RDS(ON) = 240 mΩ @ VGS = –1.8V Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 MicroFET Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –2.2 –6 1.4 0.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single...