HY27UH164G2M

m Preliminary o HY27UH(08/16)4G2M Series .c HY27SH(08/16)4G2M Series U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4 t e e h S Document Title a 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory at .D w History Revision w w Revision No. 0.0 0.1 0.2 m o .c U 4 t e e h S a t a .D w w w Initial Draft. Feb. 04. 2004 1) Add Errata Specification tCLS 0 5 tCLH tWP tALS tALH 10 15 25 45 0 5 10 15 tDS 20 25 tWC 50 70 tR 25us 27us Relaxed value Case tRC 50 tRP tREH tREA 20 20 25 20 20 30 30 30 30 Specification Read(all) Except for feb. 07. 2005 Relaxed value ID Read ID Read 2) Add note.4(table14) 50 60 3) Add application note(Power on/off Sequence & Auto sleep mode) - Texts & figures are added. 1) Change AC parameters case x8 x16 tDH 10 15 Before Afer x8, x16 15 2) Add tADL(=100ns) parameters 3) Add Muliti Die Concurrent Operations and Extended Read Status - Texts and table are added. 4) Edit Table.8 History Draft Date Remark Preliminary Preliminary Mar. 03. 2005 Preliminary Rev 0.1 / Feb. 2005 m o .c U 4 t e e h S a at .D w w w 1 Preliminary HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code SUPPLY VOLTAGE - 3...