2SK3518-01MR MOSFET Datasheet

2SK3518-01MR Datasheet, PDF, Equivalent


Part Number

2SK3518-01MR

Description

N-Channel Silicon Power MOSFET

Manufacture

Fuji Semiconductors

Total Page 4 Pages
Datasheet
Download 2SK3518-01MR Datasheet


2SK3518-01MR
2SuSpKer3F5A1P8-t4G-U0.Sc1oemMrieRsFeatures
eeHigh speed switching
hLow on-resistance
SNo secondary breadown
taLow driving power
.DaAvalanche-proof
wApplications
wwSwitching regulators
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
UPS (Uninterruptible Power Supply)
DC-DC converters
mMaximum ratings and characteristicAbsolute maximum ratings
o(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
.cDrain-source voltage
VDS
500 V
Continuous drain current
ID
±6 A
Pulsed drain current
ID(puls]
±24 A
UGate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
6A
t4Maximum Avalanche Energy
EAS
*1
115
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
ePeak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
eMax. power dissipation
PD Ta=25°C
Tc=25°C
2.16
32
W
Operating and storage
Tch
+150
°C
htemperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO
*5
2 kVrms
S*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch =<150°C
ta*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 500V *5 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
aItem
Drain-source breakdown voltaget
Gate threshold voltage
.DZero gate voltage drain current
Gate-source leakage current
wDrain-source on-state resistance
Forward transcondutance
wInput capacitance
Output capacitance
wReverse transfer capacitance
Turn-on time ton
.comTurn-off time toff
UTotal Gate Charge
t4Gate-Source Charge
eGate-Drain Charge
eAvalanche capability
hDiode forward on-voltage
SReverse recovery time
taReverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
Tch=25°C
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=3A VGS=10V
Tch=125°C
ID=3A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=3A
VGS=10V
RGS=10
VCC=250V
ID=6A
VGS=10V
L=5.9mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ.
500
3.0
10
1.15
2.5 5
430
60
2.5
10
5
20
5
15
6.5
2.5
6
1.00
0.5
1.7
Max. Units
V
5.0 V
25 µA
250
100 nA
1.50
S
675 pF
90
4.5
15 ns
7.5
30
7.5
22.5 nC
10.5
4.5
1.50
A
V
µs
µC
.DaThermalcharacteristics
wItem
wwThermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
3.91
58.0
Units
°C/W
°C/W
1

2SK3518-01MR
2SK3518-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
50
40
30
20
10
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
10
20V
9 10V
7.0V
8
6.5V
7
6
5
6.0V
4
3
2 VGS=5.5V
1
0
0 2 4 6 8 10 12 14 16 18 20 22
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
1 10
0.1 1
0.01
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
4
VGS=5.5V
3
6.0V
2
6.5V
7.0V
10V
20V
1
0
0 2 4 6 8 10
ID [A]
0.1
0.01
0.1
ID [A]
1
10
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
4.0
3.5
3.0
2.5
max.
2.0
typ.
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2


Features co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resista nce Sbreadown No secondary a t power Lo w driving a Avalanche-proof .D w wAppli cations regulators w Switching UPS (Uni nterruptible Power Supply) DC-DC conver ters (Tc=25°C unless otherwise specifi ed) Item Drain-source voltage Continuou s drain current Pulsed drain current Ga te-source voltage Repetitive or non-rep etitive Maximum Avalanche Energy Maximu m Drain-Source dV/dt Peak Diode Recover y dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/ dt *4 dV/dt *3 PD Ta=25°C Tc=25°C 2S K3518-01MR m FUJI POWER MOSFET200303 N -CHANNEL SILICON POWER MOSFET Outline D rawings [mm] TO-220F Maximum ratings a nd characteristicAbsolute maximum ratin gs Ratings 500 ±6 ±24 ±30 6 115 20 5 2.16 32 Operating and storage Tch +150 -55 to +150 temperature range Tstg Iso lation Voltage VISO *5 2 *1 L=5.90mH, V cc=50V, See to Avalanche Energy Graph * 2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, V.
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