G30N60

SGP30N60 SGW30N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type SGP30N60 SGW30N60 VCE IC VCE(sat) Tj Marking Package 600V 30A 2.5V 150°C G30N60 PG-TO-220-3-1 600V 30A 2.5V 150°C G30N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - VGE EAS tSC Ptot Tj , Tstg Ts Value 600 41 30 112 112 ±20 165 Unit V A V mJ 10 250 -55...+150 260 µs W °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov. 09 ...