2N1309 Transistor Datasheet

2N1309 Datasheet, PDF, Equivalent


Part Number

2N1309

Description

PNP Germantum Transistor

Manufacture

Central Semiconductor

Total Page 5 Pages
Datasheet
Download 2N1309 Datasheet


2N1309
2N1303 2N1305
2N1307 2N1309
GERMANIUM
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1303, 2N1305,
2N1307, and 2N1309 are germanium PNP transistors
designed for computer and switching applications.
MARKING: FULL PART NUMBER
TO-5 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
SYMBOL
VCBO
VEBO
IC
PD
TJ
Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=25V
IEBO
VEB=25V
BVCBO
IC=100μA
BVEBO
IE=100μA
VCE(SAT) IC=10mA, IB=0.5mA (2N1303)
VCE(SAT) IC=10mA, IB=0.25mA (2N1305)
VCE(SAT) IC=10mA, IB=0.17mA (2N1307)
VCE(SAT) IC=10mA, IB=0.13mA (2N1309)
VBE(SAT) IC=10mA, IB=0.5mA (2N1303)
VBE(SAT) IC=10mA, IB=0.5mA (2N1305, 07, 09)
hFE VCE=1.0V, IC=10mA (2N1303)
hFE VCE=1.0V, IC=10mA (2N1305)
hFE VCE=1.0V, IC=10mA (2N1307)
hFE VCE=1.0V, IC=10mA (2N1309)
hFE VCE=0.35V, IC=200mA (2N1303)
hFE VCE=0.35V, IC=200mA (2N1305)
hFE VCE=0.35V, IC=200mA (2N1307, 09)
hib VCB=5.0V, IE=1.0mA, f=1.0kHz
hrb VCB=5.0V, IE=1.0mA, f=1.0kHz
hob VCB=5.0V, IE=1.0mA, f=1.0kHz
hfe VCB=5.0V, IE=1.0mA, f=1.0kHz
NF VCB=5.0V, IE=1.0mA, f=1.0kHz
Cob VCB=5.0V, f=1.0MHz
Cib VEB=5.0V, f=1.0MHz
MIN
30
25
0.15
0.15
20
40
60
80
10
15
20
30
25
300
150
-65 to +85
-65 to +100
TYP MAX
10
10
0.20
0.20
0.20
0.20
0.40
0.35
200
300
29
7.0
0.40
140
3.0
20
9.0
UNITS
V
V
mA
mW
°C
°C
UNITS
μA
μA
V
V
V
V
V
V
V
V
Ω
x10-4
μS
dB
pF
pF
R1 (5-May 2014)

2N1309
2N1303 2N1305
2N1307 2N1309
GERMANIUM
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
td
tr IC=10mA, IB1=1.3mA, IB2=0.7mA
ts VBE(OFF)=0.8V, RL=1.0kΩ
tf
fhfb
VCB=5.0V, IE=1.0mA (2N1303)
3.0
fhfb
VCB=5.0V, IE=1.0mA (2N1305)
5.0
fhfb
VCB=5.0V, IE=1.0mA (2N1307)
10
fhfb
VCB=5.0V, IE=1.0mA (2N1309)
15
TYP
0.06
0.16
0.75
0.35
MAX
TO-5 CASE - MECHANICAL OUTLINE
UNITS
μs
μs
μs
μs
MHz
MHz
MHz
MHz
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (5-May 2014)


Features 2N1303 2N1305 2N1307 2N1309 GERMANIUM PN P TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S EMICONDUCTOR 2N1303, 2N1305, 2N1307, an d 2N1309 are germanium PNP transistors designed for computer and switching app lications. MARKING: FULL PART NUMBER T O-5 CASE MAXIMUM RATINGS: (TA=25°C) C ollector-Base Voltage Emitter-Base Volt age Continuous Collector Current Power Dissipation Operating Junction Temperat ure Storage Temperature SYMBOL VCBO VE BO IC PD TJ Tstg ELECTRICAL CHARACTERI STICS: (TA=25°C) SYMBOL TEST CONDITION S ICBO VCB=25V IEBO VEB=25V BVCBO IC=100μA BVEBO IE=100μA VCE(SAT) IC=10mA, IB=0.5mA (2N1303) VCE(SAT) IC =10mA, IB=0.25mA (2N1305) VCE(SAT) IC= 10mA, IB=0.17mA (2N1307) VCE(SAT) IC=1 0mA, IB=0.13mA (2N1309) VBE(SAT) IC=10 mA, IB=0.5mA (2N1303) VBE(SAT) IC=10mA , IB=0.5mA (2N1305, 07, 09) hFE VCE=1. 0V, IC=10mA (2N1303) hFE VCE=1.0V, IC= 10mA (2N1305) hFE VCE=1.0V, IC=10mA (2 N1307) hFE VCE=1.0V, IC=10mA (2N1309) hFE VCE=0.35V, IC=200mA.
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