2SK3407 MOSFET Datasheet

2SK3407 Datasheet, PDF, Equivalent


Part Number

2SK3407

Description

N-Channel MOSFET

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download 2SK3407 Datasheet


2SK3407
2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching Regulator Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 0.48 (typ.)
· High forward transfer admittance: |Yfs| = 7.5 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
10
40
40
222
10
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-08-12

2SK3407
2SK3407
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain “miller” charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾ ¾ ±10
±30 ¾
¾
¾ ¾ 100
450 ¾
¾
2.4 ¾ 3.4
¾ 0.48 0.65
3.5 7.5 ¾
¾ 1400 ¾
¾ 240 ¾
¾ 590 ¾
mA
V
mA
V
V
W
S
pF
tr VG1S0 V
0V
ton
ID = 5 A
¾ 35 ¾
VOUT
¾ 50 ¾
RL = 40 W
ns
tf ¾ 80 ¾
VDD ~- 200 V
toff Duty <= 1%, tw = 10 ms
¾ 260 ¾
Qg
Qgs VDD ~- 360 V, VGS = 10 V, ID = 10 A
Qgd
¾ 35 ¾
¾ 19 ¾ nC
¾ 16 ¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾ ¾ 10 A
¾ ¾ 40 A
¾ ¾ -1.7 V
¾ 280 ¾
ns
¾ 2.7 ¾ mC
Marking
K3407
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-08-12


Features 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2 SK3407 Switching Regulator Applications Unit: mm · · · · Low drain-sourc e ON resistance: RDS (ON) = 0.48 Ω (t yp.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage curren t: IDSS = 100 µA (max) (VDS = 450 V) E nhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source v oltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC P ulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Ra ting 450 450 ±30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Sto rage temperature range JEDEC JEITA TOS HIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Charact eristics Thermal resistance, channel to case Thermal resistance, channel to am.
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