2SK3407

2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-12 2SK3407 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source ...