SCHOTTKY RECTIFIER. 100BGQ100J Datasheet

100BGQ100J RECTIFIER. Datasheet pdf. Equivalent


International Rectifier 100BGQ100J
www.DaStCaHSOhTeTeKtY4RUE.cCoTmIFIER
Bulletin PD-20999 rev. B 12/02
100BGQ100
100BGQ100J
100 Amp
omMajor Ratings and Characteristics
.cCharacteristics
Values Units
UIF(AV) Rectangular waveform
t4@TC
IDC Maximum
eVRRM
IFSM @ tp = 5 µs sine
eVF @100Apk typical
h@TJ
TJ range
100
129
141
100
6300
0.74
125
-55 to 175
A
°C
A
V
A
V
°C
°C
Description/ Features
This Schottky rectifier has been optimized for low reverse leakage
at high temperature
The proprietary barrier technology allows for reliable operation up
to 175°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
175°C TJ operation
High Frequency Operation
Low forward voltage drop
Continuous High Current operation
Guard ring for enhanced ruggedness and long term
reliability
PowIRtabTM package
www.DataS100BGQ100
Case Styles
100BGQ100J
www.irf.com
www.DataShee1 t4U.com


100BGQ100J Datasheet
Recommendation 100BGQ100J Datasheet
Part 100BGQ100J
Description SCHOTTKY RECTIFIER
Feature 100BGQ100J; w w w .D a t a Sh t e e 4U . m o c Bulletin PD-20999 rev. B 12/02 100BGQ100 100BGQ100J 100.
Manufacture International Rectifier
Datasheet
Download 100BGQ100J Datasheet




International Rectifier 100BGQ100J
100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
100BGQ100, 100BGQ100J
100
Parameters
IF(AV) Max.AverageForwardCurrent
IF(RMS) RMS ForwardCurrent
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
EAS Non-RepetitiveAvalancheEnergy
IAR RepetitiveAvalancheCurrent
Values
100
141
6300
800
9
2
Units
Conditions
A 50%dutycycle@TC=129°C,rectangularwaveform
A TC=120°C
5µs Sineor3µsRect.pulse Following any rated
A load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS= 2 Amps, L = 4.5 mH
A Currentdecayinglinearlytozeroin1µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
Values Units
Typ. Max.
Conditions
VFM Forward Voltage Drop
(1) (2) 0.80 0.84
0.96 1.04
V
V
@ 50A
@ 100A
TJ = 25 °C
0.64 0.66 V
0.74 0.77 V
@ 50A
@ 100A
TJ = 125 °C
IRM Reverse Leakage Current (1)
VF(TO) Threshold Voltage
rt Forward Slope Resistance
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(Rated VR)
22 300 µA
14 18 mA
0.484
V
2.0 m
1320 pF
3.5 nH
10000 V/ µs
Thermal-Mechanical Specifications
TJ = 25 °C
TJ = 125°C
TJ = TJ max.
VR = rated VR
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured from tab to mounting plane
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + rt x IF
Parameters
TJ Max.JunctionTemperatureRange
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
RthCS Typical Thermal Resistance,Case to
Heatsink
wt ApproximateWeight
T MountingTorque
Min.
Max.
Case Style
Values Units
Conditions
-55to175 °C
-55to175 °C
0.50 °C/W DCoperation
0.20 °C/W Mountingsurface,smoothandgreased
5(0.18) g(oz.)
1.2(10) N*m
2.4(20) (Ibf-in)
PowIRtabTM
2 www.irf.com



International Rectifier 100BGQ100J
1000
100
TJ = 175°C
TJ = 125°C
TJ = 25°C
10
100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
1000
100
10
1
0.1
0.01
0.001
TJ = 175°C
150°C
125°C
100°C
75°C
50°C
25°C
0.0001
0
20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
1000
TJ = 25°C
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig.1-Maximum Forward Voltage Drop Characteristics
1
100
0
20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
PDM
0.01
0.00001
Single Pulse
(Thermal Resistance)
Notes:
t1
t2
1. Duty factor D = t 1/ t 2
2. Peak TJ = PDM x Z thJC+ T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
www.irf.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)