SSS6N70A

Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Thermal Resistance Symbol R R θJC θJA w w w .D t a S a Ο e h 1 O 2 O 1 O 1 O 3 O Ο t e U 4 Value 700 4 2.5 24 + _ 30 560 4 4 2.5 40 0.32 1.Gate 2. Drain 3. Source .c m o Units V A A V mJ A mJ V/ns W W/ C Ο - 55 to +150 Ο 300 C Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. 3.13 62.5 Units Ο C/W ©1999 Fairchild Semiconductor Corporation w w w .D at h S a t e e 4U . m o c Rev. B SSS6N70A Electrical Characteristics (TC=25 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Bre...