MX29LV008B

w h S FEATURES a t a single Extended - supply voltage range 2.7V to 3.6V 1,048,576 x8 D . Single power supply operation w 3.0V only operation for read, erase and program w-operation Fast access time: 70/90ns Low power consumption - 20mA maximum active current - 0.2uA typical standby current Command register architecture - Byte Programming (7us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address Erase suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase. t e e 4U m o .c MX29LV008T/B 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL DESCRIPTION The MX29LV008T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV008T/B is packaged in 40-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV008T/B offers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV008T/B has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories...