STU1224N

S amHop Microelectronics C orp. N-C hannel S Eh nhancement Mode Field E ffect Trans is tor t e e 4U m o .c S T U/D1224N Dec 20,2004 a t a P R ODUC T S UMMAR Y D . V w I R w w DS S D F E AT UR E S DS (ON) ( m £[ ) Max S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V R ugged and reliable. 24V 12A 130 @ V G S = 2.5V TO-252 and TO-251 P ackage. D G S G D S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange w w w .D t a S a (T A =25 C unles s otherwis e noted) Limit 24 12 12 25 10 50 -55 to 150 Unit V V A A A e h V DS V GS ID IDM IS PD t e G U 4 .c D S m o S ymbol T J , T S TG THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA w w w .D at 3 h S a t e e W U 4 . m o c C C /W C /W 50 S T U/D1224N E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 18V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS =4.5V, ID = 6.0A ...