STU1225PL

S amHop Microelectronics C orp. P -C hannel E nhancement Mode Field E ffect Transistor Sh t e e 4U m o .c S T U/D1255P L Arp,20 2005 ver1.1 a t a P R ODUC T S UMMAR Y D . R V w w I w DS S D F E AT UR E S DS (ON) ( m W ) Max S uper high dense cell design for low R DS (ON ). 110 @ V G S = -10V 145 @ V G S = -4.5V R ugged and reliable. -55V -12A TO-252 and TO-251 P ackage. D G S G D S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C w w -P ulsed w .D a b t a S a (T A =25 C unles s otherwis e noted) S ymbol Vspike d V DS V GS ID IDM IS PD T J , T S TG Limit 60 -55 20 -12 -10 -23 -15 50 Unit V V V A A e h t e G U 4 D S .c m o 25 C 70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC 1 R JA w w w h S -55 toa 175 t a D . 35 3 50 t e e m o A .c 4U A W C C /W C /W S T U/D1255P L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-10A V GS = -4.5V, ID = -6A V DS = -5V, V ...