STU1530PL

S amHop Microelectronics C orp. h P -C hannel E S nhancement Mode MOS FE T a t a P R ODUC T S UMMAR Y D . R V w w I w DS S D t e e 4U m o .c S T U/D1530P L P reliminary Mar.28 2004 F E AT UR E S DS (ON) ( m W ) Max S uper high dense cell design for low R DS (ON ). -30V -20A 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D G S G D S S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange w w w .D t a S a e h V DS V GS ID IDM IS PD t e G U 4 D S .c m o S ymbol Limit -30 20 -20 -50 -20 50 -55 to 175 Unit V V A A A T J , T S TG THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA w w w .D at3 h S a t e e W U 4 . m o c C C /W C /W 50 S T U/D1530P L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.8A V GS = -4.5V, ID = -2.0A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.8A Min Typ C Max Unit -30 -1 100 -1 -1.5 -2.5 35...