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STT818A

ST Microelectronics

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

® w w s s s a D . wVERY LOW SATURATION VOLTAGE DC CURRENT GAIN > 100 (hFE) 3 A CONTINUOUS COLLECTOR CURRENT (IC ) SU...


ST Microelectronics

STT818A

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Description
® w w s s s a D . wVERY LOW SATURATION VOLTAGE DC CURRENT GAIN > 100 (hFE) 3 A CONTINUOUS COLLECTOR CURRENT (IC ) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL S a t e e h U 4 t m o .c STT818A HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR s APPLICATIONS s POWER MANAGEMENT IN PORTABLE EQUIPMENTS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS DESCRIPTION Using the latest low voltage Epitaxial Planar technology based on interdigitated layout, STMicroelectronics has introduced the new “High Gain” Power bipolar transistor family, with outstanding performances. Its very low saturation voltage combined with the “high gain” characteristics make it ideal for all high efficiency low voltage switching applications. Marking : 818A ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T C = 25 C Storage Temperature Max. O perating Junction Temperature o w w w t a .D S a e h U 4 t e .c m o SOT23-6L (TSOP6) INTERNAL SCHEMATIC DIAGRAM Parameter Value -30 -30 -5 -3 -6 -0.2 -0.5 1.2 -65 to 150 150 Uni t V V V A A A February 2001 w w w .D a t a Sh ee U 4 t A W o o m o .c C C 1/6 STT818A THERMAL DATA R thj -amb (1) Thermal Resistance Junction-ambient (1) Package mounted on FR4 pcb 25mm x 25mm. Max 105 o C/W ELECTRICAL CHARACTERIS...




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