STT818B
High gain low voltage PNP power transistor
Features
■ Very low collector to emitter saturation voltage ■ DC cur...
STT818B
High gain low voltage
PNP power
transistor
Features
■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (hFE) ■ 3 A continuous collector current (IC)
Applications
■ Power management in portable equipments ■ Switching
regulator in battery charger
applications
Description
The device is manufactured in low voltage
PNP Planar Technology with "Base Island" layout. The resulting
Transistor shows exceptional high gain performance coupled with very low saturation voltage.
SOT23-6L Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STT818B
818B
Package SOT23-6L
Packaging Tape & reel
August 2007
Rev 5
1/10
www.st.com
10
Contents
Contents
STT818B
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . ...
