DatasheetsPDF.com

K1120 Dataheets PDF



Part Number K1120
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK1120
Datasheet K1120 DatasheetK1120 Datasheet (PDF)

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage.

  K1120   K1120



Document
2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 1000 V 1000 V ±20 V 8 A 24 150 W 150 °C −55 to 150 °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 0.833 50 °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±20 V, VDS = 0 V VDS = 800 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 20 V, ID = 4 A VDS = 25 V, VGS = 0 V, f = 1 MHz Rise time tr Turn−on time ton Switching time Fall time tf Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge toff Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 8 A Qgd Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Symbol IDR IDRP VDSF Test Condition — — IDR = 8 A, VGS = 0 V Marking 2SK1120 Min Typ. Max Unit — — ±100 nA — — 300 μA 1000 — — V 1.5 — 3.5 V — 1.5 1.8 Ω 2.0 4.0 — S — 1300 — — 100 — pF — 180 — — 25 — — 40 — ns — 20 — — 10.


MB90MF408 K1120 P36NE0


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)