Document
STB36NF06L, STP36NF06L
Datasheet
Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages
TAB TAB
3 1 D2PAK
TO-220
1 23
D(2, TAB)
Features
Order codes STB36NF06LT4
STP36NF06L
VDS 60 V 60 V
• AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge
RDS(on) max. 40 mΩ 40 mΩ
ID 30 A 30 A
G(1) S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status links STB36NF06L STP36NF06L
Product summary
Order code
STB36NF06LT4
Marking
B36NF06
Package
D²PAK
Packing
Tape and reel
Order code
STP36NF06L
Marking
P36NF06L
Package
TO-220
Packing
Tube
DS3365 - Rev 4 - October 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STB36NF06L, STP36NF06L
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0 V)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Derating factor
dv/dt(2)
Peak diode recovery voltage slope
EAS(3)
Single-pulse avalanche energy
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width limited by safe operating area. 2. ISD ≤ 30 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJ max. 3. Starting TJ = 25 °C, ID = 15 A, VDD = 30 V.
Symbol RthJC RthJA Tl
Table 2. Thermal data Parameter
Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Maximum lead temperature for soldering purpose
Value 60 60 ±18 30 21 120 70 0.47 10 225
-55 to 175
Unit V V V
A
A W W/°C V/ns mJ °C °C
Value 2.14 62.5 300
Unit °C/W °C/W
°C
DS3365 - Rev 4
page 2/17
STB36NF06L, STP36NF06L
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Symbol V(BR)DSS
IDSS
IGSS VGS(th)
RDS(on)
Table 3. On/off states
Parameter Drain-source breakdown voltage
Zero gate voltage drain current
Gate body leakage current Gate threshold voltage
Static drain-source on-resistance
Test conditions VGS = 0 V, ID = 250 μA VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 60 V, TC = 125 °C VDS = 0 V, VGS = ±18 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 15 A VGS = 5 V, ID = 15 A
Symbol gfs Ciss Coss Crss Qg Qgs Qgd
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 4. Dynamic Test conditions
VDS = 15 V, ID = 15 A
VDS = 25 V, f = 1 MHz, VGS = 0 V
VDD = 30 V, ID = 30 A, VGS = 5 V (see Figure 13. Test circuit for gate charge behavior)
Symbol td(on) tr td(off) tf
Parameter Turn-on delay time Rise time Turn-off delay time Fall time
Table 5. Switching times
Test conditions
VDD = 30 V, ID = 15 A, RG = 4.7 Ω, VGS = 5 V (see Figure 12. Test circuit for resistive load switching times and Figure 17. Switching time waveform)
Min. Typ. Max. Unit
60
V
1 µA
10
±100 nA
1.0
2.5
V
32 40 mΩ
45 50
Min. Typ. Max. Unit
-
15
S
-
660
pF
-
170
pF
-
70
pF
-
13 17 nC
-
4.2
nC
-
7.8
nC
Min. Typ. Max. Unit
-
10
-
ns
-
80
-
ns
-
19
-
ns
-
13
-
ns
DS3365 - Rev 4
page 3/17
STB36NF06L, STP36NF06L
Electrical characteristics
Table 6. Source-drain diode
Symbol
Parameter
Test conditions
ISD ISDM(1) VSD(2)
trr Qrr
IRRM
Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 24 A, VGS = 0 V
ISD = 20 A, di/dt = 100 A/µs, VDD = 20 V, TJ = 150 °C (see Figure 14. Test circuit for inductive load switching and diode recovery times)
1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
-
30
A
-
120 A
-
1.5
V
-
55
ns
-
107
nC
-
3.9
A
DS3365 - Rev 4
page 4/17
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
HV15530
STB36NF06L, STP36NF06L
Electrical characteristics (curves)
Figure 2. Thermal impedance
280TOC
Figure 3. Output characteristics
HV15450
Figure 4. Transfer characteristics
HV15455
Figure 5. Trasconductance
HV15460
Figure 6. Static drain-source on-resistance
HV15470
DS3365 - Rev 4
page 5/17
Figure 7. Gate charge vs gate-source voltage
HV15480
STB36NF06L, STP36NF06L
Electrical characteristics (curves)
Figure 8. Capacitance variations
HV15490
Figure 9. Normalized gate threshold vo.