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STP36NF06L Dataheets PDF



Part Number STP36NF06L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel Power MOSFET
Datasheet STP36NF06L DatasheetSTP36NF06L Datasheet (PDF)

STB36NF06L, STP36NF06L Datasheet Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) Features Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description This Power MOSFET has been developed us.

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STB36NF06L, STP36NF06L Datasheet Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) Features Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status links STB36NF06L STP36NF06L Product summary Order code STB36NF06LT4 Marking B36NF06 Package D²PAK Packing Tape and reel Order code STP36NF06L Marking P36NF06L Package TO-220 Packing Tube DS3365 - Rev 4 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STB36NF06L, STP36NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0 V) VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating factor dv/dt(2) Peak diode recovery voltage slope EAS(3) Single-pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 30 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJ max. 3. Starting TJ = 25 °C, ID = 15 A, VDD = 30 V. Symbol RthJC RthJA Tl Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Maximum lead temperature for soldering purpose Value 60 60 ±18 30 21 120 70 0.47 10 225 -55 to 175 Unit V V V A A W W/°C V/ns mJ °C °C Value 2.14 62.5 300 Unit °C/W °C/W °C DS3365 - Rev 4 page 2/17 STB36NF06L, STP36NF06L Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Table 3. On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate body leakage current Gate threshold voltage Static drain-source on-resistance Test conditions VGS = 0 V, ID = 250 μA VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 60 V, TC = 125 °C VDS = 0 V, VGS = ±18 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 15 A VGS = 5 V, ID = 15 A Symbol gfs Ciss Coss Crss Qg Qgs Qgd Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Table 4. Dynamic Test conditions VDS = 15 V, ID = 15 A VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 30 A, VGS = 5 V (see Figure 13. Test circuit for gate charge behavior) Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 5. Switching times Test conditions VDD = 30 V, ID = 15 A, RG = 4.7 Ω, VGS = 5 V (see Figure 12. Test circuit for resistive load switching times and Figure 17. Switching time waveform) Min. Typ. Max. Unit 60 V 1 µA 10 ±100 nA 1.0 2.5 V 32 40 mΩ 45 50 Min. Typ. Max. Unit - 15 S - 660 pF - 170 pF - 70 pF - 13 17 nC - 4.2 nC - 7.8 nC Min. Typ. Max. Unit - 10 - ns - 80 - ns - 19 - ns - 13 - ns DS3365 - Rev 4 page 3/17 STB36NF06L, STP36NF06L Electrical characteristics Table 6. Source-drain diode Symbol Parameter Test conditions ISD ISDM(1) VSD(2) trr Qrr IRRM Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 24 A, VGS = 0 V ISD = 20 A, di/dt = 100 A/µs, VDD = 20 V, TJ = 150 °C (see Figure 14. Test circuit for inductive load switching and diode recovery times) 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Min. Typ. Max. Unit - 30 A - 120 A - 1.5 V - 55 ns - 107 nC - 3.9 A DS3365 - Rev 4 page 4/17 2.1 Electrical characteristics (curves) Figure 1. Safe operating area HV15530 STB36NF06L, STP36NF06L Electrical characteristics (curves) Figure 2. Thermal impedance 280TOC Figure 3. Output characteristics HV15450 Figure 4. Transfer characteristics HV15455 Figure 5. Trasconductance HV15460 Figure 6. Static drain-source on-resistance HV15470 DS3365 - Rev 4 page 5/17 Figure 7. Gate charge vs gate-source voltage HV15480 STB36NF06L, STP36NF06L Electrical characteristics (curves) Figure 8. Capacitance variations HV15490 Figure 9. Normalized gate threshold vo.


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