CMOS 1M-Bit DRAM
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c . C-MOS 1M (262,144x4)-BIT DYNAMIC RAM U 4 t e e h S a at .D w w
**********
- TOP VIEW DQ1 1 DQ2 2 GND 20 19 DQ4 18...
Description
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c . C-MOS 1M (262,144x4)-BIT DYNAMIC RAM U 4 t e e h S a at .D w w
**********
- TOP VIEW DQ1 1 DQ2 2 GND 20 19 DQ4 18 DQ3 17 CAS 16 OE 15 A8 14 A7 13 A6 12 A5 11 A4 WE 3 RAS 4 5 N.C. A0 6 A1 7 A2 8 A3 9 V DD 10 (+5V)
om
MB81C4256-10 IL08
6 7 8 9 11 12 13 14 15
A0 A1 A2 A3 A4 A5 A6 A7 A8
1 DQ1 2 DQ2 18 DQ3 19 DQ4
4 17 3 16 A0-8 CAS DQ1-4 OE RAS WE
RAS CAS
4 17 MODE CONTROL
SERIAL ACCESS COUNTER
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6-9,11-15 A0-A8
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t a .D
CLOCK GEN. No1
S a
e h
U 4 t e
SUBSTRATE BIAS GEN. WRITE CLOCK GEN.
; ADDRESS INPUTS ; COLUMN ADDRESS STROBE ; DATA INPUTS/OUTPUTS ; OUTPUT ENABLE ; ROW ADDRESS STROBE ; WRITE ENABLE
.c
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RAS CAS WE OE
CLOCK GEN. No2
3
WE
ADDRESS BUFFER
DATA INPUT BUFFER COLUMN DECODER SENSE AMP. I/O GATE 1,2,18,19
DQ1-DQ4
PREDECODER ROW DECODER 1,048,576-BIT MEMORY CELL DATA OUTPUT BUFFER
REFRESH ADDRESS COUNTER
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.D
a t a
e h S
4 t e
U
m o .c
16
OE
...
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