Document
m o .c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .D w w w
TYPE V DSS R DS(on) ID STP3NB60 STP3NB60FP 600 V 600 V <3.6 Ω < 3.6 Ω 3.3 A 2.2 A
s s s s s
TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
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ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( • ) P tot dv/dt( 1 ) V ISO T stg Tj March 1998
Drain-source Voltage (V GS = 0) Gate-source Voltage
Drain- gate Voltage (R GS = 20 k Ω )
Drain Current (continuous) at T c = 25 C
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m o .c U 4 t e e h S a t a .D w w w
3 1 2
3 2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Parameter
Value 600
Unit V V V A A
STP3NB60
STP3NB60FP
600
± 30
o
Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
m o .c U 4 t e e h S a at .D w w w
2.1 80 1.4 35 13.2 13.2 A W 0.64 4.5 0.28 4.5 W/ o C V/ns V
o o
3.3
2.2
2000
-65 to 150 150
C C
1/9
STP3NB60/FP
THERMAL DATA
TO-220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1.56 62.5 0.5 300 TO220-FP 3.57
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 3.3 100 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 600 1 50 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 30 V
T c = 125 o C
ON (∗)
Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V Test Conditions ID = 250 µ A I D = 1.6 A 3.3 Min. 3 Typ. 4 3.3 Max. 5 3.6 Unit V Ω A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacit.