STP3NB90FP

w w a D . w S a t e e h U 4 t m o .c STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W TYPE VDSS 900 V 900 V STP3NB90 STP3NB90FP s s s s s TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 1 2 TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ORDERING INFORMATION SALES TYPE STP3NB90 w w w t a .D MARKING P3NB90 P3NB90FP S a e h INTERNAL SCHEMATIC DIAGRAM U 4 t e .c TO-220FP m o 3 1 2 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE STP3NB90FP October 2002 w w w .D a S a t e e h U 4 t m o .c 1/10 STP3NB90 - STP3NB90FP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100...