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UPD4416008

NEC

16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a ...


NEC

UPD4416008

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Description
DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a high speed, low power, 16,777,216 bits (2,097,152 words by 8 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) Features 2,097,152 words by 8 bits Fast access time : 15, 17 ns (MAX.) Output Enable input for easy application Ordering Information Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 230 220 At standby 10 µPD4416008G5-A15-9JF µPD4416008G5-A17-9JF 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 3.3 ± 0.3 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14080EJ4V0DS00 (4th edition) Date Published December 2000 NS CP(K) Printed in Japan The mark shows major revised points. © 1999 µPD4416008 Pin Configuration (Marking Side) /xxx indicates active low signal. 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) [µPD4416008G5−xxx−9JF] NC VCC NC I/O 7 GND I/O 8 A0 A1 A2 A3 A4 NC /CS VCC /WE NC A5 A6 A7 A8 A9 I/O 1 VCC I/O 2 NC GND NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 3...




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