UPD4416016

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416016 is packaged in a 54-pin plastic TSOP (II). Features 1,048,576 words by 16 bits organization Fast access time : 15, 17 ns (MAX.) Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) Output Enable input for easy application Ordering Information Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 250 240 At standby 10 µPD4416016G5-A15-9JF µPD4416016G5-A17-9JF 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 3.3 ± 0.3 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14081EJ5V0DS00 (5th edition) Date Published December 2000 NS CP(K) Printed in Japan The mark shows major revised points. © 1999 µPD4416016 Pin Configuration (Marking Side) /xxx indicates active low signal. 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) [µPD4416016G5−xxx−9JF] I/O 13 VCC I/O 14 I/O 15 GND I/O 16 A0 A1 A2 A3 A4 /UB /CS VCC /WE NC A5 A6 A7 A8 A9 I/O 1 VCC I/O 2 I/O 3 GND I/O 4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22...