64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
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a t Featuresa : D . ∗ w 65,536 words by 16 bits organization. ∗ w Fast access time and cycle time. w ∗ Dual CAS...
Description
G -LINK
a t Featuresa : D . ∗ w 65,536 words by 16 bits organization. ∗ w Fast access time and cycle time. w ∗ Dual CAS Input.
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Low power dissipation. Read-Modify-Write, RAS -Only Refresh, CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh cycles per 4ms. ∗ Available in 40-pin 400 mil SOJ and 40/44 pin TSOP (II). ∗ Single 5.0V±10% Power Supply. ∗ All inputs and Outputs are TTL compatible. ∗ Extended Data-Out(EDO) Page Mode operation.
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GLT41016
Feb 2004 (Rev 2.2)
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Description :
The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT41016 accepts 256-cycle refresh in 4ms interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up to 256 x 16 bits, within a page, with cycle times as short as 12ns. The GLT41016 is best suited for graphics, and DSP applications requiring high performance memories.
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tAA) Min. Extended Data Out Page Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (tRC) Max. CAS Access Time (tCAC)
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35 35 ns 18 ns 13 ns 70 ns 11 ns
40 40 ns 20 ns 15 ns 75 ns 12 ns
45 45 ns 22 ns 18 ns 80 ns 12 ns
30 ns 15 ns 12 ns 65 ns 10 ns
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