MS82V16520

E2L1056-39-72 This version: Jul. 1999 MS82V16520 m Previous version: Sep. 1998 ¡ Semiconductor o c . MS82V16520 U 4 262,144-Word ¥ 32-Bit ¥t2-Bank Synchronous Graphics RAM e e h S DESCRIPTION a t a is a synchronous graphics random access memory organized as 256 K words ¥ 32 The MS82V16520 D bits ¥ 2 banks. . Thisw device can operate up to 143 MHz by using synchronous interface. In addition, it has 8-column Block Write function and Write per bit function which improves performance in graphics w wsystems. ¡ Semiconductor FEATURES 262,144 words ¥ 32 bits ¥ 2 banks memory Single 3.3 V ± 0.3 V power supply LVTTL compatible inputs and outputs All input signals are latched at rising edge of system clock Auto precharge and controlled precharge Internal pipelined operation: column address can be changed every clock cycle Dual internal banks controlled by A10 (Bank Address: BA) Independent byte operation via DQM0 to DQM3 8-column Block Write function Persistent write per bit function Programmable burst sequence (Sequential/Interleave) Programmable burst length (1, 2, 4, 8 and full page) Programmable CAS latency (2, 3) Burst stop function (full-page burst) Power Down operation and Clock Suspend operation Auto refresh and self refresh capability 2,048 refresh cycles/32 ms Package: 100-pin plastic QFP (QFP100-P-1420-0.65-BK4) (Product : MS82V16520-xGA) x indicates speed rank. PRODUCT FAMILY MS82V16520-7 MS82V16520-8 w w w .D t a S a e h t e ...