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CS223M

Central Semiconductor

SILICON CONTROLLED RECTIFIER

w w at .D w h S a t e e 0.8 AMP SCR 600 VOLTS 4U CS223M .c om Central TM Semiconductor Corp. DESCRIPTION: T...


Central Semiconductor

CS223M

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Description
w w at .D w h S a t e e 0.8 AMP SCR 600 VOLTS 4U CS223M .c om Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223M type is an epoxy molded Silicon Controlled Rectifier designed for circuit sensing, detection and control applications including lamp drivers and small motor control MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IGM VGM Tstg TJ 600 0.8 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM Rated VDRM, Rated VDRM, VD=12V RGK=1KΩ VD=12V VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C ITM=1.0A, tp=380µs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C w w .D w t a S a ΘJA e h t e U 4 0.24 2.0 0.1 1.0 8.0 62.5 TYP 20 0.25 0.61 1.2 10 .c m o V A A W W A V °C °C UNITS A2s -40 to +150 -40 to +125 °C/W MAX 1.0 100 200 5.0 0.8 1.7 UNITS µA µA µA mA V V V/µs 25 R0 (13-January 2005) w w w .D a S a t e e h U 4 t m o .c Central TM Semiconductor Corp. CS223M 0.8 AMP SCR 600 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) GATE 2) ANODE 3) CATHODE 4) ANODE MARKING ...




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