NT256S64V8HC0G

NT256S64V8HC0G 256MB : 32M x 64 Unbuffered SDRAM Module 32Mx64 bit Two Bank Unbuffered SDRAM Module based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module l l w l l l l l l w at .D w Intended for PC133 applications - Clock Frequency: 133MHz - Clock Assess Time: 5.4ns Inputs and outputs are LVTTL (3.3V) compatible Single 3.3V ± 0.3V Power Supply Single Pulsed RAS interface SDRAMs have 4 internal banks Module has 2 physical bank Fully Synchronous to positive Clock Edge Data Mask for Byte Read/Write control Auto Refresh (CBR) and Self Refresh l l l l l aS e e h U 4 t m o .c l l Automatic and controlled Precharge commands Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8 - Operation: Burst Read and Write or Multiple Burst Read with Single Write Suspend Mode and Power Down Mode 4096 Refresh cycles distributed across 64ms Gold contacts SDRAMs in TSOP Type II Package - Clock Cycle: 7.5ns Serial Presence Detect with Write Protect Description NT256S64V8HC0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which is organized as 32Mx64 high-speed memory arrays and is configured as two 16M x 64 physical bank. The DIMM uses sixteen 16Mx8 SDRAMs in 400mil TSOP II pack-ages. The DIMM achieves high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that supports th...