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NT256D64S8HA0G-6

Nanya Technology

256MB DIMM

NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM 184pin Two Bank Unbuffered DDR SDRAM MODULE Based on DDR333 16...


Nanya Technology

NT256D64S8HA0G-6

File Download Download NT256D64S8HA0G-6 Datasheet


Description
NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM 184pin Two Bank Unbuffered DDR SDRAM MODULE Based on DDR333 16Mx8 SDRAM Features Performance : 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module 32Mx64 Double Data Rate (DDR) SDRAM DIMM w w a D . w S a t e e h U 4 t m o .c DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during Read cycles Address and control signals are fully synchronous to positive clock edge Unit 2 133 7.5 266 MHz ns MHz Programmable Operation: - DIMM CAS Latency: 2, 2.5 - Burst Type: Sequential or Interleave - Burst Length: 2, 4, 8 - Operation: Burst Read and Write Auto Refresh (CBR) and Self Refresh Modes 12/10/2 Addressing (row/column/bank) Serial Presence Detect Gold contacts PC2700 -6 2.5 166 6 333 Speed Sort DIMM CAS Latency f CK Clock Frequency t CK Clock Cycle f DQ DQ Burst Frequency Intended for 166 MHz and 133 MHz applications Inputs and outputs are SSTL-2 compatible VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2 Single Pulsed RAS interface SDRAMs have 4 internal banks for concurrent operation Module has two physical banks Differential clock inputs Data is read or written on both clock edges Automatic and controlled precharge commands 15.6 µ s Max. Average Periodic Refresh Interval SDRAMs in 66-pin TSOP Type II Package Description NT256D64S8HA0G-6 is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memor...




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