NT256D64S88B0G

NT512D64S8HB1G / NT512D64S8HB1GY / NT512D64S8HB0G NT256D64S88B1G / NT256D64S88B1GY NT256D64S88B0G NT128D64SH4B1G / NT512D72S8PB0G (ECC) / NT256D72S89B0G (ECC) 512MB, 256MB and 128MB PC3200, PC2700 and PC2100 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333/266 256M bit B Die device Features 184 Dual In-Line Memory Module (DIMM) Unbuffered DDR DIMM based on 256M bit die B device, organized as either 32Mbx8 or 16Mbx16 Performance: PC3200 PC2700 PC2100 Speed Sort DIMM CAS Latency fCK tCK Clock Frequency Clock Cycle 5T 3 200 5 400 6K 2.5 166 6 333 75B 2.5 133 7.5 266 MHz ns MHz Unit DRAM DLL aligns DQ and DQS transitions with clock transitions Address and control signals are fully synchronous to positive clock edge Programmable Operation: - DIMM CAS Latency: 2, 2.5, 3 - Burst Type: Sequential or Interleave - Burst Length: 2, 4, 8 - Operation: Burst Read and Write Auto Refresh (CBR) and Self Refresh Modes Automatic and controlled precharge commands 7.8 µs Max. Average Periodic Refresh Interval Serial Presence Detect EEPROM Gold contacts SDRAMs are packaged in TSOP packages “Green” packaging – lead free fDQ DQ Burst Frequency Intended for 133, 166 and 200 MHz applications Inputs and outputs are SSTL-2 compatible VDD = VDDQ = 2.5V ± 0.2V (2.6V ± 0.1V for PC3200) SDRAMs have 4 internal banks for concurrent operation Differential clock inputs Data is read or written on both clock edges Description NT512D64S8HB0G, NT512D64S8H...