Document
Ordering number:EN5481
Features
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· Low ON resistance. · 4V drive.
.D
a t a
Sh
t e e
4U
.
m o c
N-Channel Silicon MOSFET
FW215
DC-DC Converter Applications
Package Dimensions
unit:mm 2129
[FW215]
8 5
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT
0.595
1.27
Tch
Tstg
Electrical Characteristics at Ta=25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Cutoff Voltage Gate-to-Source Leakage Current Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance Input Capacitance
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t a
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) 1unit Mounted on a ceramic board (1200mm2×0.8mm)
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e h
Conditions
t e
0.43
0.1
1.5
1.8max
1
U 4
4
.c
m o
6.0 0.3
4.4
0.2
1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2 7:Drain 1 8:Drain 1
SANYO:SOP8
Ratings 30 ±20 5 48 1.7 2.0 150 –55 to +150 Unit V V A A W W
˚C ˚C
Symbol ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz
Conditons
Ratings min 30 100 ±10 1.0 5 9 36 58 460 250 120 10 120 70 46 78 2.4 typ max
Unit V µA µA V S mΩ mΩ pF pF pF
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
VDS=10V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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15 3 4 1.0
80
et
4U
ns
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m o c
ns ns ns
nC nC nC
1.2
V
61598TS (KOTO) TA-0975 No.5481-1/3
FW215
Switching Time Test Circuit
10V 0V VIN VIN PW=10µs D.C.≤1% VDD=10V ID=5A RL=2Ω
D
VOUT
G
P.G
50Ω
FW215
S
6
I D - VDS
8V 6V
10 9
I D - VGS
VDS =10V
3.5 V
5
4V
Drain Current, ID – A
10V
8
3V
Drain Current, ID – A
4
7 6 5 4 3 2 1
3
75˚C
25˚C
1.0 1.5 2.0 2.5
2
1
VGS=2.5V
0 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0
Ta =
3.0
- 25
3.5
0.5
Drain-to-Source Voltage,VDS – V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100
Gate-to-Source Voltage, VGS – V
VDS=10V
100 90
| yfs | - I D
Between Drain-to-Source On-State Resistance, RDS (on) – mΩ
R DS(on) - VGS
Tc=25˚C
Forward Transfer Admittance,| yfs| – S
80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20
C 25˚
Ta 2 =5˚C ˚C 75
ID=5A
Drain Current, ID – A
100
Gate-to-Source Voltage, VGS – V
10 7 VGS=0.