DatasheetsPDF.com

FW215 Dataheets PDF



Part Number FW215
Manufacturers Sanyo Semiconductor
Logo Sanyo Semiconductor
Description DC-DC Converter Applications
Datasheet FW215 DatasheetFW215 Datasheet (PDF)

Ordering number:EN5481 Features w w w · Low ON resistance. · 4V drive. .D a t a Sh t e e 4U . m o c N-Channel Silicon MOSFET FW215 DC-DC Converter Applications Package Dimensions unit:mm 2129 [FW215] 8 5 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT 0.595 1.

  FW215   FW215



Document
Ordering number:EN5481 Features w w w · Low ON resistance. · 4V drive. .D a t a Sh t e e 4U . m o c N-Channel Silicon MOSFET FW215 DC-DC Converter Applications Package Dimensions unit:mm 2129 [FW215] 8 5 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT 0.595 1.27 Tch Tstg Electrical Characteristics at Ta=25˚C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Cutoff Voltage Gate-to-Source Leakage Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance w w w .D t a PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) 1unit Mounted on a ceramic board (1200mm2×0.8mm) S a e h Conditions t e 0.43 0.1 1.5 1.8max 1 U 4 4 .c m o 6.0 0.3 4.4 0.2 1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2 7:Drain 1 8:Drain 1 SANYO:SOP8 Ratings 30 ±20 5 48 1.7 2.0 150 –55 to +150 Unit V V A A W W ˚C ˚C Symbol ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz Conditons Ratings min 30 100 ±10 1.0 5 9 36 58 460 250 120 10 120 70 46 78 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage VDS=10V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN w w w .D at aS he 15 3 4 1.0 80 et 4U ns . m o c ns ns ns nC nC nC 1.2 V 61598TS (KOTO) TA-0975 No.5481-1/3 FW215 Switching Time Test Circuit 10V 0V VIN VIN PW=10µs D.C.≤1% VDD=10V ID=5A RL=2Ω D VOUT G P.G 50Ω FW215 S 6 I D - VDS 8V 6V 10 9 I D - VGS VDS =10V 3.5 V 5 4V Drain Current, ID – A 10V 8 3V Drain Current, ID – A 4 7 6 5 4 3 2 1 3 75˚C 25˚C 1.0 1.5 2.0 2.5 2 1 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 Ta = 3.0 - 25 3.5 0.5 Drain-to-Source Voltage,VDS – V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 Gate-to-Source Voltage, VGS – V VDS=10V 100 90 | yfs | - I D Between Drain-to-Source On-State Resistance, RDS (on) – mΩ R DS(on) - VGS Tc=25˚C Forward Transfer Admittance,| yfs| – S 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 C 25˚ Ta 2 =5˚C ˚C 75 ID=5A Drain Current, ID – A 100 Gate-to-Source Voltage, VGS – V 10 7 VGS=0.


7704403xx FW215 FW211


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)