FW211

Ordering number:EN5579A Features w w w · Low ON resistance. · 2.5V drive. .D a t a Sh t e e 4U . m o c N-Channel Silicon MOSFET FW211 DC-DC Converter Applications Package Dimensions unit:mm 2129 [FW211] 8 5 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Electrical Characteristics at Ta=25˚C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Cutoff Voltage Gate-to-Source Leakage Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance w w w .D t a PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) S a e h Conditions t e 0.595 1.27 0.43 0.1 1.5 1.8max 1 U 4 4 .c 4.4 m o 6.0 0.3 0.2 1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2 7:Drain 1 8:Drain 1 SANYO:SOP8 Ratings 20 ±10 6 52 1.7 2.0 150 –55 to +150 Unit V V A A W W ˚C ˚C Symbol ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz Conditions Ratings min 20 100 ±10 0.4 9 15 27 35 750 520 300 20 200 150 150 30 35 48 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(...