MJE13001 Transistors Datasheet

MJE13001 Datasheet, PDF, Equivalent


Part Number

MJE13001

Description

Transistors

Manufacture

SI Semiconductors

Total Page 3 Pages
Datasheet
Download MJE13001 Datasheet


MJE13001
mShenzhen SI Semiconductors Co., LTD.
.coMJE SERIES TRANSISTORS
t4UFEATURES HIGH VOLTAGE CAPABILITY
heeAPPLICATION: FLUORESCENT LAMP
.DataSAbsolute Maximum Ratings TC=25°C
w PARAMETER
SYMBOL
ww Collector-Base Voltage
VCBO
HIGH SPEED SWITCHING
ELECTRONIC BALLAST
VALUE
500
TO-92
UNIT
V
Product Specification
MJE13001
WIDE SOA
Collector-Emitter Voltage
Emitter- Base Voltage
mCollector Current
oTotal Power Dissipation
Junction Temperature
.cStorage Temperature
VCEO
VEBO
IC
PC
Tj
Tstg
400
9
0.3
7
150
-65-150
V
V
A
W
°C
°C
t4UElectronic Characteristics Tc=25°C
eCHARACTERISTICS
SYMBOL
eCollector-Base Cutoff Current
ICBO
hCollector-Emitter Cutoff Current
ICEO
Collector-Emitter Voltage
VCEO
SEmitter- Base Voltage
VEBO
taCollector-Emitter Saturation Voltage
Vces
.DaBase-Emitter Saturation Voltage
wDC Current Gain
wStorage Time
wFalling Time
VBES
hFE
tS
tf
TEST CONDITION
VCB=500V
VCE=400V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=0.05A, ,IB=0.01A
IC=0.1A,IB=0.02A
IC=0.3A,IB=0.1A
IC=0.1A,IB=0.02A
VCE=5V,IC=1mA
VCE=5V,IC=20mA
VCE=5V,IC=200mA
VCC=250V,
IC=5IB
IB1= -IB2=0.04A
MIN
400
9
8
10
8
MAX
100
250
0.5
1.0
3.0
1.5
UNIT
A
A
V
V
V
V
40
2.0
µS
0.8
www.DataSheet4U.comSi semiconductors 2004.10
1

MJE13001
Shenzhen SI Semiconductors Co., LTD.
MJE SERIES TRANSISTORS
Ic(A)
1
SOA (DC)
0.1
0.01
0.001
1
hFE
100
Vce(V)
10 100 1000
hFE - Ic
Tj=125
Tj=25
Tj= 40
10
Product Specification
MJE13001
%
120
Pc Tj
100
80
IS/B
60
Ptot
40
20
0
0 50 100 150 Tj( )200
hFE
100
hFE - Ic
Tj=125
Tj=25
Tj= 40
10
Vce=1.5V
1
0.001
0.01
Ic(A)
0.1 1
Vces(v)
10
hFE=5
Vces - Ic
1
Tj=125
Tj= 40
Tj=25
0.1
0.01
0.01
0.1 Ic(A) 1
Vce=5V
1
0.001
0.01
Ic(A)
0.1 1
Vbes(v)
1.4
hFE=5
1.2
1
0.8
0.6
0.4
0.2
0
0.01
Vbes - Ic
0.1
Tj= 40
Tj=25
Tj=125
Ic(A)
1
Si semiconductors 2004.10
2


Features w m o .c MJE SERIES TRANSISTORS U 4 t e e h S a at Absolute .D Maximum Ratings TC=25°C w w Shenzhen SI Semiconductor s Co., LTD. FEATURES APPLICATION: FLUOR ESCENT LAMP PARAMETER SYMBOL VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Volta ge Collector-Emitter Voltage Emitter- B ase Voltage Collector Current Total Pow er Dissipation Junction Temperature Sto rage Temperature Product Specification MJE13001 HIGH SPEED SWITCHING ELECTRO NIC BALLAST WIDE SOA HIGH VOLTAGE CAPA BILITY TO-92 VALUE 500 400 9 0.3 7 150 -65-150 UNIT V V V A W °C °C Electr onic Characteristics CHARACTERISTICS Co llector-Base Cutoff Current Collector-E mitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage Tc=25° C SYMBOL ICBO ICEO VCEO VEBO Vces TEST CONDITION Collector-Emitter Saturatio n Voltage Base-Emitter Saturation Volt age DC Current Gain Storage Time Falli ng Time w w w t a .D VBES hFE tS tf S a VCB=500V VCE=400V,IB=0 IC=10mA, IB=0 IE=1mA,IC=0 e h U 4 t e MIN 400 9 .c MAX 100 250 m o UNIT .
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