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SU50N02409PU54A. 50N02409PU54A Datasheet

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SU50N02409PU54A. 50N02409PU54A Datasheet






50N02409PU54A SU50N02409PU54A. Datasheet pdf. Equivalent




50N02409PU54A SU50N02409PU54A. Datasheet pdf. Equivalent





Part

50N02409PU54A

Description

SU50N02409PU54A



Feature


www.DataSheet4U.com www.DataSheet4U.com SUD50N024-06P New Product Vishay Sili conix N-Channel 22-V (D-S) 175_C MOSFE T PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchF ETr Power MOSFET D 175_C Junction Tempe rature D PWM Optimized for High Efficie ncy APPLICATIONS D Synchronous Buck DC /DC Conversion - D.
Manufacture

Vishay Intertechnology

Datasheet
Download 50N02409PU54A Datasheet


Vishay Intertechnology 50N02409PU54A

50N02409PU54A; esktop - Server D TO-252 G Drain Conn ected to Tab G D S Top View Order Numb er: SUD50N024-06P S N-Channel MOSFET A BSOLUTE MAXIMUM RATINGS (TA = 25_C UNLE SS OTHERWISE NOTED) Parameter Drain-Sou rce Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Aval anche Current, Sin.


Vishay Intertechnology 50N02409PU54A

gle Pulse Avalanche Energy, Single Pulse TA = 25_C Maximum Power Dissipation Op erating Junction and Storage Temperatur e Range TC = 25_C PD TJ, Tstg L = 0.1 m H TC = 25_C TC= 100_C ID IDM IS IAS EAS Symbol VDS(pulse) VDS VGS Limit 24C 22 "20 80d 56d 100 26 45 101 6.8a 65 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum J unction Junction-t.


Vishay Intertechnology 50N02409PU54A

o-Ambient to Ambienta Maximum Junction-t o-Case t v 10 sec Steady State RthJA Rt hJC Symbol Typical 18 40 1.9 Maximum 22 50 2.3 Unit _C/W Notes a. Surfac e Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitati on current is 50 A.

Part

50N02409PU54A

Description

SU50N02409PU54A



Feature


www.DataSheet4U.com www.DataSheet4U.com SUD50N024-06P New Product Vishay Sili conix N-Channel 22-V (D-S) 175_C MOSFE T PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchF ETr Power MOSFET D 175_C Junction Tempe rature D PWM Optimized for High Efficie ncy APPLICATIONS D Synchronous Buck DC /DC Conversion - D.
Manufacture

Vishay Intertechnology

Datasheet
Download 50N02409PU54A Datasheet




 50N02409PU54A
wwwww..DDaatataSShheeete4tU4.Uco.cmom
New Product
SUD50N024-06P
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.006 @ VGS = 10 V
24C
0.0095 @ VGS = 4.5 V
TO-252
ID (A)d
80
64
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D Synchronous Buck DC/DC Conversion
- Desktop
D - Server
GDS
Top View
Order Number:
SUD50N024-06P
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Pulse Voltage
VDS(pulse)
24C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC= 100_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
22
"20
80d
56d
100
26
45
101
6.8a
65
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t v 10 sec
Steady State
RthJA
Maximum Junction-to-Case
RthJC
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
Typical
18
40
1.9
Maximum
22
50
2.3
Unit
_C/W
www.vishay.com
1




 50N02409PU54A
wwwww..DDaatataSShheeete4tU4.Uco.cmom
SUD50N024-06P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
ISM
VSD
trr
IF = 50 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
22
V
0.8 3.0
"100
nA
1
mA
50
50 A
0.0046 0.006
0.0073
0.0084
0.0095
W
15 S
2550
900
415
1.5
19
7.5
6.0
11
10
24
9
30
20
15
35
15
pF
W
nC
ns
100 A
1.2 1.5 V
35 70 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
Transfer Characteristics
100
140
120
100
80
60
40
20
0
0
VGS = 10 thru 5 V
4V
3V
2V
2468
VDS - Drain-to-Source Voltage (V)
10
80
60
40
TC = 125_C
20
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72289
S-31398—Rev. A, 30-Jun-03




 50N02409PU54A
wwwww..DDaatataSShheeete4tU4.Uco.cmom
New Product
SUD50N024-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
100
0.010
TC = - 55_C
80
25_C
0.008
60
125_C
0.006
40 0.004
20 0.002
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 6.3 V
VGS = 10 V
0
0
3500
3000
2500
2000
1500
1000
500
0
0
10 20 30 40
ID - Drain Current (A)
Capacitance
Ciss
Crss
Coss
4 8 12 16
VDS - Drain-to-Source Voltage (V)
50
20
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 30 A
1.4
0.000
0
10
20 40 60 80
ID - Drain Current (A)
Gate Charge
8
VDS = 10 V
ID = 50 A
6
100
4
2
0
0 8 16 24 32 40
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
1.2
TJ = 150_C
TJ = 25_C
10
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
1
0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
1.5
www.vishay.com
3



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