STB9NC60

w w at .D w aS e e h U 4 t m o .c N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™ II MOSFET RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A STB9NC60 STB9NC60-1 TYPE VDSS 600 V 600 V STB9NC60 STB9NC60-1 s s s s s TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER D2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt Tstg Tj February 2002 Drain-source Voltage (VGS = 0) w Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C w w t a .D Parameter S a e h U 4 t e .c I2PAK m o 3 12 Value 600 600 ±30 9 5.7 36 125 1.0 3.5 – 55 to 150 Unit V V V A A Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature ()Pulse width limited by safe operating area (1)ISD ≤ 9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJ...