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STB95NF03
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STB95NF03
N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET™ ...
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STB95NF03
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STB95NF03
N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET™ II POWER MOSFET
RDS(on) <0.007 Ω ID 80 A
TYPE
VDSS 30 V
TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(∗) ID IDM() Ptot dv/dt
(1)
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
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Gate- source Voltage
Drain Current (continuous) at TC = 25°C
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Parameter
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INTERNAL SCHEMATIC DIAGRAM
t e
U 4
D2PAK TO-263 (Suffix “T4”)
.c
3 1
m o
Value 30 30 ± 20 80 80 320 150 1 3.0 720 -55 to 175
Unit V V V A A A W
Drain Current (continuous) at TC = 100°C Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
Drain Current (pulsed)
EAS (2) Tstg Tj
() Pulse width limited by safe operating area. (*) Current Limited...
