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SBB4089 Dataheets PDF



Part Number SBB4089
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
Datasheet SBB4089 DatasheetSBB4089 Datasheet (PDF)

Product Description Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB-4089 does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB-4089 product is designed for high linearity 5V gain block applications that require small size.

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Product Description Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB-4089 does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB-4089 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. w w w .D a t a e h S et 4U . m o c SBB-4089 SBB-4089Z Pb RoHS Compliant & Green Package 0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier Product Features • • • • • • • • Gain & Return Loss vs. Frequency (w/ BiasTees) 20 10 0 dB -10 -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 S21 Available in Lead Free, RoHS compliant, & Green packaging IP3 = 35.2 dBm @ 1950MHz P1dB = 19.3 dBm @ 1950MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C Patented Thermal Design & Patent Pending Bias Circuit Low Thermal Resistance MSL 1 moisture rating S22 S11 Symbol S 21 P 1dB OIP3 Parameter Small Si gnal Gai n Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt Bandwi dth S11, S22: Mi ni mum 10dB Return Loss (typ.) S11 S 22 S 12 NF VD ID RTH, j-l Input Return Loss Output Return Loss Reverse Isolati on Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) VD = 5 V TL = 25ºC ID = 80 mA Typ. ZS = ZL = 50 Ohms w w w .D t a S a 6 e h • • • • dB dB m dB m MHz dB dB dB dB V mA Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS Wideband Instrumentation Wireless Data, Satellite Terminals U nits Frequency 850MHz 1950 MHz 2000 MHz 850MHz 1950 MHz 850MHz 1950 MHz Min. 14.0 14.0 13.5 18 33.0 Typ. 15.0 15.5 15.5 19.0 19.5 39.0 35.0 4500 1950 MHz 1950 MHz 1950 MHz 1950 MHz 10.0 10.0 17.5 17.5 18.5 4.5 5 72 Max. 17.0 17.0 17.5 t e U 4 .c m o °C /W Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm Tested with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 w w w .D at a Sh ee 80 U 4 t . m o c 5.5 92 5.25 69.9 http://www.sirenza.com EDS-103832 Rev D SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With .5-3.5 GHz Application Circuit) Frequency (MHz) Symbol Parameter Unit 500 850 1950 2500 3500 4000 S21 OIP3 P1dB S11 S22 S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VCC = 5V TL = 25°C ID = 80mA Typ. ZS = ZL = 50 Ohms dB dBm dBm dB dB dB dB 15.6 38.8 19.2 25.1 32.1 18.4 4.3 15.6 39.3 19.1 29.9 26.4 18.4 4.3 15.5 35.2 19.2 19.4 17.2 18.9 4.6 15.5 32.8 18.6 17.6 14.7 19.1 4.5 15.5 29.1 16.7 14.9 13.2 19.8 4.8 15.0 26.1 14.1 21.3 17.4 20.8 5.1 Test Conditions: OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm 7 6 5 dB 4 3 Noise Figure @ 25C P1dB vs. Frequency with App. Ckt. Avg. BiasTee 25 2 1 0.5 1 Avg. AppCkt 20 1.5 dBm 2 2.5 Frequency (GHz) 3 3.5 4 15 45 40 35 dBm 30 25 20 15 0.5 1 OIP3 vs. Frequency with App. Ckt. 10 P1dB 25C P1dB -40C P1dB 85C 5 0.5 1 1.5 2 2.5 Frquency (GHz) 3 3.5 4 IP3 25C IP3 -40C IP3 85C 1.5 2 2.5 Frequency (GHz) 3 3.5 4 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103832 Rev D SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier S-Parameters taken with Bias Tee over Temperature 0 -10 -20 dB -30 25C S11 vs. Frequency 25 20 15 dB 10 25C S21 vs. Frequency -40 -50 0 1 2 3 Frequency (GHz) 4 -40C 85C 5 0 5 6 0 1 -40C 85C 2 3 4 Frequency (GHz) 5 6 -10 -15 -20 -25 -30 25C S12 vs. Frequency 0 -10 -20 dB -30 -40 S22 vs. Frequency dB 25C -40C 85C -35 -40 0 1 -40C 85C -50 -60 0 1 2 2 3 4 Frequency (GHz) 5 6 3 4 Frequency (GHz) 5 6 Device Current over .


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