SPP11N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.38 Ω 11 A PG-TO262 PG-TO220 2 P-TO220-3-1 23 1 Type SPP11N60S5 SPI11N60S5 Package PG-TO220 PG-TO262 Ordering Code Q67040-S4198 Q67040-S4338 Marking 11N60S5 11N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 5.5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value 11 7 22 340 0.6 11 ±20 ±30 125 -55... +150 Unit A mJ A V W °C Rev. 2.7 Page 1 2009-11-30 SPP11N60S5 SPI11N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 1 K/W -...