SPP11N60C3

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID Periodic avalanche rated PG-TO220FP PG-TO262 Extreme dv/dt rated High peak current capability Improved transconductance 23 1 P-TO220-3-31 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.38 Ω 11 A PG-TO220 Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 11 111) 7 71) 33 33 340 340 0.6 0.6 11 11 ±20 ±20 ±30 ±30 125 33 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.3 Page 1 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junct...