Power Transistor. SPP11N60C3 Datasheet

SPP11N60C3 Transistor. Datasheet pdf. Equivalent


Part SPP11N60C3
Description Power Transistor
Feature SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolu.
Manufacture Infineon Technologies
Datasheet
Download SPP11N60C3 Datasheet


SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MO SPP11N60C3 Datasheet
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SPP11N60C3
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv/dt rated
High peak current capability
Improved transconductance
23
1
P-TO220-3-31
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.38
11 A
PG-TO220
Type
Package
Ordering Code Marking
SPP11N60C3
PG-TO220 Q67040-S4395 11N60C3
SPI11N60C3
PG-TO262 Q67042-S4403 11N60C3
SPA11N60C3 PG-TO220FP Q67040-S4408
SPA11N60C3E8185 PG-TO220
11N60C3
11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
11
111)
7
71)
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.3
Page 1
2018-02-09



SPP11N60C3
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
3.8
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
- 700
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=500µA, VGS=VDS 2.1
VDS=600V, VGS=0V,
Tj=25°C
-
Tj=150°C
-
3 3.9
µA
0.1 1
- 100
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=30V, VDS=0V
VGS=10V, ID=7A
Tj=25°C
Tj=150°C
-
- 100 nA
- 0.34 0.38
- 0.92 -
Gate input resistance
RG
f=1MHz, open drain
-
0.86
-
Rev. 3.3
Page 2
2018-02-09





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