Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge
SPP11N60CFD
VDS @ Tjmax 650
V
RDS(on)
0.44 Ω
ID
11 A
PG-TO220
Type
Package
SPP11N60CFD PG-TO220
Ordering Code Q67040-S4618
Marking 11N60CFD
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
T C = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V
ID puls EAS
Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Reverse diode dv/dt
dv/dt
IS=11A, VDS=480V, Tj=125°C
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
VGS VGS Ptot Tj , Tstg
Rev. 2.6
Page 1
Value
Unit
A
11
7
28
340
mJ
0.6
11
A
40
V/ns
±20
V
±30
125
W
-55... +150
°C
2007-08-30
SPP11N60CFD
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Maximum diode commutation speed
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
di F/dt
Value 80
600
Unit V/ns
A/µs
Symbol
RthJC Rt...