H8050

Shantou Huashan Electronic Devices Co.,Ltd. H8050 █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………40V VCEO——Collector-Emitter Voltage……………………………25V VEBO——Emitter-Base Voltage………………………………6V IC——Collector Current………………………………………1.5A TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO HFE Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO Cob fT Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product █ hFE Classification Min Typ Max Unit Test Conditions 0.1 μA VCB=35V, IE=0 0.1 μA VEB=6V, IC=0 85 500 VCE=1V, IC=100mA 40 VCE=1V, IC=800mA 1 V VCE=1V, IC=10mA 0.5 V IC=800mA, IB=80mA 1.2 V IC=800mA,IB=80mA 40 V IC=100μA，IE=0 25 V IC=2mA，IB=0 6 V IE=100μA，IC=0 9.0 100 pF VCB=10V,IE=0，f=1MHz MHz VCE=10V, IC=50mA B 85—160 C 120—200 D 160—300 E 270—500 Shantou Huashan Electronic Devices Co.,Ltd. H8050 ...