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T1620-700W Dataheets PDF



Part Number T1620-700W
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (T1620-600W/700W / T1630-600W) Snubberless Triac
Datasheet T1620-700W DatasheetT1620-700W Datasheet (PDF)

w at .D w wFEATURES I = 16 A s h S a ® ee U 4 t m o .c T1620-600W / 700W T1630-600W SNUBBERLESS TRIAC TRMS A2 A1 s s s s VDRM = VRRM = 600V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 G DESCRIPTION The T1620-600W/700W and 1630-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for a.

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w at .D w wFEATURES I = 16 A s h S a ® ee U 4 t m o .c T1620-600W / 700W T1630-600W SNUBBERLESS TRIAC TRMS A2 A1 s s s s VDRM = VRRM = 600V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 G DESCRIPTION The T1620-600W/700W and 1630-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Parameter Non repetitive surge peak on-state current (Tj initial = 25° C ) I2t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dI G /dt = 1 A/µs. Tstg Tj Tl w w w t a .D S a e h U 4 t e Tc= 75°C tp = 16.7 ms (1 cycle, 60 Hz) .c m o G A1 A2 ISOWATT220AB (Plastic) Value 16 165 195 190 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A tp = 10 ms (1/2 cycle, 50 Hz) tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Storage temperature range Operating junction temperature range °C °C Maximum lead temperature for soldering during 10s at 4.5 mm from case Value Symbol VDRM VRRM Parameter 600 Repetitive peak off-state voltage Tj = 125° C 600 700 September 2001 - Ed: 1A w w w .D a S a t 700 e e h U 4 tUnit V m o .c 1/5 T1620-600W / 1620-700W and T1630-600W THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360° conduction angle) Parameter Value 50 2.5 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA dlG/dt= 3Aµs IT= 250mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Tj= 125°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1620 20 1.5 0.2 2 50 V µA mA V/µs V/µs T1630 30 Unit mA V V µs IGM = 4 A (tp = 20 µs) ITM = 22.5A tp= 380µs VDRM rated VRRM rated Linear slope up to VD=67%VDRM Gate open (dI/dt)c = 9 A/ms (see note) * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T1620W / T1630W triacs. 2/5 T1620-600W / 1620-700W and T1630-600W Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) Tcase (o C) Rth = 0 o C/W 1 o C/W 2 o C/W 4 o C/W 25.


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