DatasheetsPDF.com

2SD1460

Toshiba

Silicon NPN Transistor

:) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector C...


Toshiba

2SD1460

File Download Download 2SD1460 Datasheet


Description
:) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO VCEO RATING 100 100 UNIT V Emitter-Base Voltage VEBO Collector Current ic 30 Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT IB PC L stg 200 150 -65-150 COLLECTOR 1. BASE 2. EMITTER COLLECTOR (CASE) TO-3 TOSHIBA TC-3 , TB-3 2-21A1A _[_' _ v^ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL EMITTER Mounting Kit No. AC73 Weight : 13g TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, I E=0 - - 100 nk Emitter Cut-off Current Collector-Emitter Breakdwon Voltage lEBO v (BR) CEO...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)