(MT58LxxxLxxF) 2Mb SRAM
m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D . FEATURES w w w
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K ...
Description
m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D . FEATURES w w w
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L128L18F, MT58L64L32F, MT58L64L36F; MT58L128V18F, MT58L64V32F, MT58L64V36F
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through
Fast clock and OE# access times Single +3.3V +0.3V/-0.165V power supply (VDD) Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered addresses, data I/Os and control signals Internally self-timed WRITE cycle Burst control pin (interleaved or linear burst) Automatic power-down 100-pin TQFP package Low capacitive bus loading x18, x32, and x36 versions available
OPTIONS
Timing (Access/Cycle/MHz) 6.8ns/8.0ns/125 MHz 7.5ns/8.8ns/113 MHz 8.5ns/10ns/100 MHz 10ns/15ns/66 MHz Configurations 3.3V I/O 128K x 18 64K x 32 64K x 36 2.5V I/O 128K x 18 64K x 32 64K x 36 Packages 100-pin TQFP
m o .c U 4 t e e h S a t a .D w w w
*JEDEC-standard MS-026 BHA (LQFP).
100-Pin TQFP*
GENERAL DESCRIPTION
MARKING
-6.8 -7.5 -8.5 -10
MT58L128L18F MT58L64L32F MT58L64L36F
MT58L128V18F MT58L64V32F MT58L64V36F T None
Operating Temperature Range Commercial (0°C to +70°C)
Part Number Example:
MT58L64L36FT-8.5
The Micron® SyncBurst™ SRAM family employs high-speed, low-p...
Similar Datasheet