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STP50N06FI Dataheets PDF



Part Number STP50N06FI
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel Enhancement Mode Power MOS Transistor
Datasheet STP50N06FI DatasheetSTP50N06FI Datasheet (PDF)

w w a D . w S a t e e h U 4 t m o .c STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPE VDSS 60 V 60 V STP50N06 STP50N06FI s s s s s s s s TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOL.

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w w a D . w S a t e e h U 4 t m o .c STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPE VDSS 60 V 60 V STP50N06 STP50N06FI s s s s s s s s TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o w w w Parameter t a .D S a e h INTERNAL SCHEMATIC DIAGRAM U 4 t e 1 2 .c m o 1 3 2 ISOWATT220 Value STP50N06 60 60 ± 20 50 35 200 150 1  -65 to 175 175 27 19 200 45 0.3 2000 STP50N06FI Unit V V V A A A (•) Pulse width limited by safe operating area July 1993 w w w .D a t a Sh ee U 4 t W/o C V o o W m o .c C C 1/10 STP50N06/FI THERMAL DATA TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 3.33 o o o C/W C/W C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 50 400 100 35 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V(BR)DSS I DS S I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 60 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100o C 50 Min. 2 Typ. 2.9 0.022 Max. 4 0.028 0.056 Unit V Ω Ω A V GS = 10 V I D = 25 A V GS = 10 V I D = 25 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 25 A VGS = 0 Min. 17 Typ. 22 1700 630 200 2200 850 260 Max. Unit S pF pF pF 2/10 STP50N06/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 25 V ID = 25 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) V DD = 40 V ID = 50 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) V DD = 40 V ID = 50 A V GS = 10 V Min. Typ. 50 110 460 Max. 70 160 Unit ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 50 14 25 70 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 40 V I D = 50 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ. 55 50 110 Max. 80 70 160 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM ( • ) VS D ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 50 A V GS = 0 150 0.45 6 I SD = 50 A di/dt = 100 A/ µ s V DD = 30 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 50 200 2 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 3/10 STP50N06/FI Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Transfer Characteristics 4/10 STP50N06/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STP50N06/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time S.


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