STP50NE08

m o .c U 4 t e STP50NE08 e h S N - CHANNEL ENHANCEMENT MODE a t a " SINGLE FEATURE SIZE™ " POWER MOSFET .D w w w TYPICAL R = 0.020 Ω TYPE V DSS 80 V R DS(on) ID STP50NE08 <0.024 Ω 50 A s s s s s EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( ) P tot Drain-source Voltage (V GS = 0) Gate-source Voltage Drain- gate Voltage (R GS = 20 k Ω ) Drain Current (continuous) at T c = 25 C o m o .c U 4 t e e h S a t a .D w w w 3 1 2 DS(on) TO-220 INTERNAL SCHEMATIC DIAGRAM Parameter Value 80 80 Unit V V V A ± 20 50 35 o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt ( 1 ) Peak Diode Recovery voltage slope T stg Tj Storage Temperature Max. Operating Junction Temperature () Pulse width limited by safe operating area (1) ISD ≤ 50 A, di/dt ≤ 30...