(PDF) BD130 Datasheet PDF | Comset Semiconductors





BD130 Datasheet PDF

Part Number BD130
Description NPN Silicon Transistor
Manufacture Comset Semiconductors
Total Page 3 Pages
PDF Download Download BD130 Datasheet PDF

Features: Datasheet pdf BD130 S w w w .D a t a h t e e 4 U . m o c NPN SILICON TRANSISTOR POW ER LINERAR AND SWITCHING APPLICATIONS T he BD130 is a silicon epitaxial-base NP N transistor in JEDEC TO3 metal case. I t is intended for power switching circu its, series and shunt regulators, outpu t stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEX IC IB PT Collector-Emitter Vo ltage Collector-Base Voltage Ratings Collector-Emitter Voltage Collector Cur rent Base Current TJ w w w .D t a S a e h t e U 4 .c m o Value 60 100 100 15 7 Unit V V V A A Watts VBE =-1.5 V Power Dissipation @ TC = 45° 100 Junction Temperature -55 to +20 0 TS Storage Temperature °C COMSET S EMICONDUCTORS w w w .D at h S a t e e 4U . m o c 1/3 BD130 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.55 Unit °C/W ELECTRICAL CHAR ACTERISTICS TC=25°C unless otherwise n oted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(BR).

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BD130 datasheet
wwwB.DD1a3t0aSPhOeWetE4RUL.cIoNmENRPANRSIALNICDOSNWTIRTCAHNISNIGSTAOPRPLICATIONS
The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-
3 metal case. It is intended for power switching circuits, series and
shunt regulators, output stages and high fidelity amplifiers.
U.comABSOLUTE MAXIMUM RATINGS
et4Symbol
Ratings
eVCEO
Collector-Emitter Voltage
ShVCBO
Collector-Base Voltage
taVCEX
Collector-Emitter Voltage
VBE=-1.5 V
aIC Collector Current
.DIB Base Current
wwwPT
Power Dissipation
@ TC = 45°
Value
60
100
100
15
7
100
Unit
V
V
V
A
A
Watts
TJ Junction Temperature
U.comTS Storage Temperature
www.DataSheet4COMSET SEMICONDUCTORS
-55 to +200 °C
1/3

BD130 datasheet
BD130
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.55
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(BR)
Collector-Emitter
Breakdown Voltage (*)
IC=200 mA, IB=0
VCE(SAT)
Collector-Emitter Saturation
Voltage (*)
IC=4 A, IB=0.4 A
ICEX
IEBO
Collector-Emitter Cutoff
Current
VCE=100 V
VBE=-1.5 V
VCE=100 V
VBE=-1.5 V
TCASE=150°C
Emitter-Base Cutoff Current VEB=7 V
VBE
Base-Emitter Voltage (*)
IC=4.0 A, VCE=4.0V
fT
Transition Frequency
IC=0.1 A, VCE=4 V
Min Typ Mx Unit
60 V
- 0.5 1.1 V
- - 0.5
mA
- - 30
- - 5.0 mA
- 0.95 1.8 V
1.1 MHz
COMSET SEMICONDUCTORS
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