2D150

USR Semiconductor Co., Ltd 2D150 SYMBOL CHARACTERISTIC TEST CONDITIONS Single-phase full wave rectifying circuit, TC=100°C VRRM tp=10ms VRsM= VDRM&VRRM+200V at V RRM 10ms half sine wave VR=0.6VRRM DIODE MODULE Tj(°C) VALUE Min Type Max 150 600 1800 10 2.50 31.8 0.80 UNIT IO VRRM IRRM IFSM It VFO rF VFM Rth(j-c) Viso Fm Tstg Wt Outline 2 DC output current Repetitive peak reverse voltage Repetitive peak current Surge forward current I T for fusing coordination Threshold voltage 2 150 150 150 150 A V mA KA A s*10 V 2 3 150 Forward slop resistance Peak forward voltage Thermal resistance Junction to heatsink Isolation voltage Terminal connection torque(M4) Mounting torque(M6) Stored temperature Weight 410F4 -40 430 I FM=225A Single side cooled 50Hz,R.M.S,t=1min,I iso:1mA(max) 2500 1.5 3.0 125 25 3.8 1. 655 0.150 mΩ V °C /W V N· m N· m °C g OUTLINE DRAWING & CIRCUIT DIAGRAM USR Semiconductor Co., Ltd Peak forward Voltage Vs.Peak forward Current MDQ/S150 3.5 3 2.5 2 1.5 1 0.5 10 100 Instantaneous on-state currant,amperes 1000 Tj=150°C Transient thermal impedance,°C/W Max. junction To case Thermai Impedance Vs.Time 0.15 0.15 DIODE MODULE Instantaneous on-state voltage,volts 0.12 0.09 0.06 0.03 0 0.001 0.01 0.1 time S 1 10 Fig.1 Max. Power Dissipation Vs.Mean forward Current MDQ150 600 Max.on-state dissipation,wates 500 400 300 200 100 0 0 50 100 150 Mean on-state current,amperes 200 60 0 30 Case temperature,°C 160 Fig.2 Max. case Temperature Vs.Mean forward C...