IXFN100N25

Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFN 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mW trr £ 250 ns Maximum Ratings 250 250 ±20 ±30 100 400 100 64 3 5 600 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard package miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2 V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 27 mW DC-DC converters Battery chargers Switched-mode and resonant-...