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HGTP14N41G3VL

Fairchild Semiconductor

N-Channel IGBT

HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs This N...


Fairchild Semiconductor

HGTP14N41G3VL

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Description
HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit Formerly Developmental Type TA49360. Features Ignition Energy = 340mJ at TJ (STARTING) = 25oC Typical Internal Clamp Voltage = 410V at TJ = 25oC Logic Level Gate Drive ESD Gate Protection TJ = 175oC Internal Series and Shunt Gate Resistors 24V Reverse Battery Capability Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGT1S14N41G3VLS HGTP14N41G3VL PACKAGE TO-263AB TO-220AB BRAND 14N41GVL 14N41GVL Packaging JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A G COLLECTOR (FLANGE) E Symbol COLLECTOR R1 GATE R2 JEDEC TO-220AB E C G EMITTER COLLECTOR (FLANGE) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,41...




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