N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM60T03H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge Simple drive requirement Fast switching
Description...
Description
SSM60T03H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge Simple drive requirement Fast switching
Description
D
G S
BV DSS R DS(ON) ID
30V 12mΩ 45A
The SSM60T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM60T03J in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability.
G D S TO-252 (H)
G
D
S
TO-251 (J)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C
EAS TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating 30 ±20 45 32 120 44
0.352 29
-55 to 175 -55 to 175
Units V V A A A W
W/°C mJ °C °C
Max. 3.4 110
Units °C/W °C/W
8/16/2004 Rev.2.1
www.SiliconStandard.com
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SSM60T03H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter...
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