IXFT24N50

HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Symbol Test Conditions Maximum Ratings VDSS ID25 RDS(on) 500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω t rr ≤ 250 ns TO-247 AD (IXFH) VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 500 V 500 V ±20 V ±30 V TC = 25°C 21N50 21 A 24N50 24 A 26N50 26 A TC = 25°C, pulse width limited by TJM 21N50 84 A 24N50 96 A 26N50 104 A TC = 25°C 21N50 21 A 24N50 24 A 26N50 26 A TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 30 mJ 5 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.6 mm (0.062 in.) from case for 10 s 300 °C Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g TO-268 (D3) Case Style (TAB) G S TO-204 AE (IXFM) OBSOLETE PACKAGE TYPE G D G = Gate, S = Source, D = Drain, TAB = Drain (TAB) Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V Characteristic Values (TJ...