MSA-0736

Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0735, -0736 Features Cascadable 50 Ω Gain Block Low Operating Voltage: 4.0 V Typical Vd 3 dB Bandwidth: DC to 2.4 GHz 13.0 dB Typical Gain at 1.0␣ GHz Unconditionally Stable (k>1) Cost Effective Ceramic Microstrip Package microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0735 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 4.0 V 2 5965-9591E 6-394 MSA-0735, -0736 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 275 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are e...